High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N, Phase I

Metadata Updated: November 12, 2020

One of the main issues for III-nitride growth is the lack of a suitable native substrate. Growth on foreign substrates such as sapphire or SiC results in nitride material with a high density of defects due to large mismatches in lattice constant and thermal expansion. Nonetheless, nitride devices grown on these substrates have demonstrated optical and electronic properties that are practically unmatched by other material systems. In particular, the AlGaN/GaN high electron mobility transistors (HEMTs) constitute a leading candidate for simultaneously realizing ultrahigh-frequency low-noise amplifiers and power amplifiers. Here, we propose to use high quality bulk GaN and AlN substrates for substantial improvements in the operation of AlGaN/GaN HEMTs. We also propose a method of isolating the n-type substrate from the active layer. In this way, we take advantage of the reduced thermal and lattice mismatch, lower density of treading dislocations, and improved thermal conductance to significantly improve the dc and RF operation of these devices. Some projected HEMT device parameters to achieve are a current density > 1.5A/mm, extrinsic transconductance values > 400 mS/mm, fmax > 200 GHz, and power density > 10 W/mm at 40 GHz.

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Public: This dataset is intended for public access and use. License: No license information was provided. If this work was prepared by an officer or employee of the United States government as part of that person's official duties it is considered a U.S. Government Work.

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Metadata Created Date November 12, 2020
Metadata Updated Date November 12, 2020

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Harvested from NASA Data.json

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Resource Type Dataset
Metadata Created Date November 12, 2020
Metadata Updated Date November 12, 2020
Publisher Space Technology Mission Directorate
Unique Identifier Unknown
Maintainer
Identifier TECHPORT_7341
Data First Published 2003-07-01
Data Last Modified 2020-01-29
Public Access Level public
Bureau Code 026:00
Metadata Context https://project-open-data.cio.gov/v1.1/schema/catalog.jsonld
Metadata Catalog ID https://data.nasa.gov/data.json
Schema Version https://project-open-data.cio.gov/v1.1/schema
Catalog Describedby https://project-open-data.cio.gov/v1.1/schema/catalog.json
Homepage URL https://techport.nasa.gov/view/7341
Program Code 026:027
Source Datajson Identifier True
Source Hash 93dfa3d1b56bc0726eed27d60c36c8a3eeebb054
Source Schema Version 1.1

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